伍帅琴  副研究员

一、基本信息

    姓    名：伍帅琴                

    性    别：男                         

    籍    贯：四川                

    出生年月：1994年9月                    

    毕业院校：中国科学院大学                                                 

    学历学位：研究生/博士                   

    技术职务：副研究员

    导师类别：硕导                 

    工作部门：中国科学院上海技术物理研究所 红外科学与技术全国重点实验室  

    电子邮箱：wushuaiqin@mail.sitp.ac.cn

 二、工作简历

    2022年7月-2025年6月 复旦大学光电研究院博士后。

    2025年7月至今 中国科学院上海技术物理研究所。

三、科研工作简介

    主要从事新型多维红外光电探测器件研究，具体研究方向包括：极化材料物理与界面光电子学、铁电畴调控的多维红外光电探测机理与器件等。相关研究成果以第一/通讯作者在Nature Communications、Advanced Materials、Materials Science & Engineering: R: Reports等高水平期刊发表SCI论文12篇；申请发明专利7项、授权4项。作为项目负责人主持国家自然科学基金青年项目等科研项目，作为重要骨干参与先导专项、基金委重点等项目。

    在培养研究生方面，鼓励研究生围绕国家重大应用需求和国际科技前沿问题展开研究，注重培养研究生的科研兴趣与独立开展科研工作的能力。

四、代表性论文专利

    [1] Shuaiqin Wu#, Jie Deng#, Xudong Wang*, Jing Zhou*, Hanxue Jiao, Qianru Zhao, Tie Lin, Hong Shen, Xiangjian Meng, Yan Chen*, Junhao Chu, JianluWang, Polarization photodetectors with configurable polarity transition enabled by programmable ferroelectric-doping patterns, Nature Communications, 15, 8743, 2024.

    [2] Shuaiqin Wu#, Yan Chen#, Xudong Wang*, Hanxue Jiao, Qianru Zhao, Xinning Huang, Xiaochi Tai, Yong Zhou, Hao Chen, Xingjun Wang, Shenyang Huang, Hugen Yan, Tie Lin, Hong Shen, Weida Hu, Xiangjian Meng, Junhao Chu, Jianlu Wang*, Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains, Nature Communications, 13, 3198, 2022.

    [3] Chang Liu#, Shuaiqin Wu#, Ying Zhang, Xudong Wang*, Junhao Chu, Jianlu Wang*, Interfaces in two-dimensional transistors: Key to pushing performance and integration, Materials Science and Engineering: R: Reports, 162, 100883, 2025.

    [4] Qianru Zhao#, Binmin Wu#, Shuaiqin Wu*, Xinyue Lv, Xinfeng Hu, Chenyu Huang, Yunxiang Di, Yuqing Zheng, Guichen Teng, Chang Liu, Peng Wang, Yan Chen, Tie Lin, Xiangjian Meng, Hong Shen*, Xudong Wang*, Junhao Chu, Jianlu Wang, Ferroelectric reconfigurable homojunction miniaturized computational spectrometers for dynamic spectral sensing, Advanced Materials, 38, e15132, 2026.

    [5] Yuqing Zheng, Shuaiqin Wu*, Binmin Wu, Chang Liu, Huiting Wang, Ying Zhang, Lu Wang, Ke Xiong, Yong Zhou, Hong Shen, Tie Lin, Xiangjian Meng*, Xudong Wang*, Junhao Chu, Jianlu Wang, High-Performance FETs with High-k STO by Optimized van der Waals Heterostructure Interface, ACS Applied Materials & Interfaces, 17, 24079, 2025.

    [6] Lu Wang#, Shuaiqin Wu#, Qianru Zhao, Huiting Wang, Jinhua Zeng; Zhaobiao Diao, Dongyang Zhao, Yuqing Zheng, Yan Chen, Chang Liu, Binmin Wu, Tie Lin, Hong Shen, Xiangjian Meng, Xudong Wang*, Junhao Chu, Jianlu Wang*, Multistate nonvolatile memory enabled by opto-electric manipulation based on van der Waals ferroelectric semiconductor, Applied Materials Today, 43: 102662, 2025.

    [7] Haoran Yan#, Shuaiqin Wu#, Yan Chen*, Yongguang Xiao*, Ke Xiong, Qianru Zhao, Minghua Tang, Hanxue Jiao, Tie Lin, Hong Shen, Xiangjian Meng, Xudong Wang, Junhao Chu, and Jianlu Wang Negative capacitance tunneling field-effect transistor for logic electronics and photodetection devices, Applied Materials Today, 44, 102737, 2025.

    [8] Zhaobiao Diao#, Shuaiqin Wu#, Yan Chen*, Lu Wang, Chang Liu, Binmin Wu, Peng Wang, Tie Lin, Hong Shen*, Xiangjian Meng, Xudong Wang*, Junhao Chu & Jianlu Wang, Ambipolar MoS2 enabled through high-ε ferroelectric P(VDF-TrFE), SCIENCE CHINA Information Sciences, 1869-1919, 2025.

    [9] Huiting Wang, Shuaiqin Wu*, Yan Chen*, Qianru Zhao, Jinhua Zeng, Ruotong Yin, Yuqing Zheng, Chang Liu, Shukui Zhang, Tie Lin, Hong Shen, Xiangjian Meng*, Jun Ge, Xudong Wang, Junhao Chu, Jianlu Wang. Bulk photovoltaic effect in two-dimensional ferroelectric α-In2Se3, SCIENCE CHINA Information Sciences, 68, 122401, 2025.

    [10] 王建禄;伍帅琴;吴广健;王旭东;沈宏;林铁;孟祥建;褚君浩；一种铁电畴定义的串联二维光伏电池及制备方法；中国发明专利，专利号：ZL202010966329.9。

    [11] 王旭东;柳畅;张莹;伍帅琴;沈宏;林铁;孟祥建;褚君浩;王建禄;原子级逐层蒸发制备二维半导体单晶金属接触方法及应用;中国发明专利，专利号：ZL202510983258.6。

    [12] 王旭东;颜浩然;陈艳;伍帅琴;沈宏;林铁;孟祥建;王建禄;褚君浩；一种负电容隧穿光电晶体管及其制备方法和应用；中国发明专利，专利号：ZL202411343294.8。

    [13] 王旭东;郑雨晴;伍帅琴;孟祥建;沈宏;林铁;王建禄;褚君浩；一种场效应晶体管的制备方法；中国发明专利，专利号：ZL20241961407.0。